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1 features applications description TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 1.25-w mono fully differential audio power amplifier designed for wireless or cellular handsets 2 1.25 w into 8 ? from a 5-v supply at and pdas thd = 1% (typical) low supply current: 1.7 ma typical shutdown control < 10 m a the TPA6203A1 is a 1.25-w mono fully differential only five external components amplifier designed to drive a speaker with at least ? improved psrr (90 db) and wide supply 8- ? impedance while consuming less than 37 mm 2 voltage (2.5 v to 5.5 v) for direct battery (zqv package option) total printed-circuit board operation (pcb) area in most applications. this device operates from 2.5 v to 5.5 v, drawing only 1.7 ma of quiescent ? fully differential design reduces rf supply current. the TPA6203A1 is available in the rectification space-saving 2 mm x 2 mm microstar junior? bga ? improved cmrr eliminates two input package, and the space saving 3 mm x 3 mm qfn coupling capacitors (drb) package. ? c (bypass) is optional due to fully features like 85-db psrr from 90 hz to 5 khz, differential design and high psrr improved rf-rectification immunity, and small pcb avaliable in a 2 mm x 2 mm microstar area makes the TPA6203A1 ideal for wireless junior ? bga package (gqv, zqv) handsets. a fast start-up time of 4 m s with minimal pop makes the TPA6203A1 ideal for pda available in 3 mm x 3 mm qfn package (drb) applications. available in an 8-pin powerpad? msop (dgn) 1 please be aware that an important notice concerning availability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 junior, powerpad, microstar junior are trademarks of texas instruments. production data information is current as of publication date. copyright ? 2002 ? 2008, texas instruments incorporated products conform to specifications per the terms of the texas instruments standard warranty. production processing does not necessarily include testing of all parameters. gqv, zqv drb dgn application circuit actual solution size 6,9 mm 5,25 mm (1) c b r i r i c s r f r f _+ v dd v o+ v o- gnd to battery c s bias circuitry in-in+ + - in from dac shutdown r i r i r f r f applies to the gqv/zqv packages only c ( ) bypass (optional)
absolute maximum ratings recommended operating conditions dissipation ratings TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com these devices have limited built-in esd protection. the leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the mos gates. ordering information packaged devices (1) (2) (3) microstar junior? microstar junior? qfn msop (gqv) (zqv) (drb) (dgn) device TPA6203A1gqvr TPA6203A1zqvr TPA6203A1drb TPA6203A1dgn symbolization aadi aaei aaji aaii (1) the gqv is the standard microstar junior package. the zqv is a lead-free option and is qualified for 260 lead-free assembly. (2) the gqv and zqv packages are only available taped and reeled. the suffix r designates taped and reeled parts. (3) for the most current package and ordering information, see the package option addendum at the end of this document, or see the ti website at www.ti.com . over operating free-air temperature range unless otherwise noted (1) unit supply voltage, v dd -0.3 v to 6 v input voltage, v i inx and shutdown pins -0.3 v to v dd + 0.3 v continuous total power dissipation see dissipation rating table operating free-air temperature, t a -40 c to 85 c junction temperature, t j -40 c to 125 c storage temperature, t stg -65 c to 150 c zqv, drb, dgn 260 c lead temperature 1,6 mm (1/16 inch) from case for 10 seconds gqv 235 c (1) stresses beyond those listed under " absolute maximum ratings ? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under " recommended operating conditions ? is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. min typ max unit supply voltage, v dd 2.5 5.5 v high-level input voltage, v ih shutdown 2 v low-level input voltage, v il shutdown 0.8 v common-mode input voltage, v ic v dd = 2.5 v, 5.5 v, cmrr -60 db 0.5 v dd -0.8 v operating free-air temperature, t a -40 85 c load impedance, z l 6.4 8 ? t a 25 c t a = 70 c t a = 85 c package derating factor power rating power rating power rating gqv, zqv 885 mw 8.8 mw/ c 486 mw 354 mw drb 2.7 w 21.8 mw/ c 1.7 w 1.4 w 2 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1
electrical characteristics operating characteristics TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 t a = 25 c, gain = 1 v/v parameter test conditions min typ max unit output offset voltage (measured |v oo | v i = 0 v, v dd = 2.5 v to 5.5 v 9 mv differentially) psrr power supply rejection ratio v dd = 2.5 v to 5.5 v -90 -70 db v dd = 3.6 v to 5.5 v, v ic = 0.5 v to v dd -0.8 -70 -65 cmrr common-mode rejection ratio db v dd = 2.5 v, v ic = 0.5 v to 1.7 v -62 -55 v dd = 5.5 v 0.30 0.46 r l = 8 ? , v in+ = v dd , v ol low-level output voltage v dd = 3.6 v 0.22 v v in- = 0 v or v in+ = 0 v, v in- = v dd v dd = 2.5 v 0.19 0.26 v dd = 5.5 v 4.8 5.12 r l = 8 ? , v in+ = v dd , v oh high-level output voltage v dd = 3.6 v 3.28 v v in- = 0 v or v in+ = 0 v, v in- = v dd v dd = 2.5 v 2.1 2.24 |i ih | high-level input current v dd = 5.5 v, v i = 5.8 v 1.2 m a |i il | low-level input current v dd = 5.5 v, v i = -0.3 v 1.2 m a i dd supply current v dd = 2.5 v to 5.5 v, no load, shutdown = 2 v 1.7 2 ma i dd(sd) supply current in shutdown mode shutdown = 0.8 v, v dd = 2.5 v to 5.5 v, no load 0.01 0.9 m a t a = 25 c, gain = 1 v/v, r l = 8 ? parameter test conditions min typ max unit v dd = 5 v 1.25 p o output power thd + n = 1%, f = 1 khz v dd = 3.6 v 0.63 w v dd = 2.5 v 0.3 v dd = 5 v, p o = 1 w, f = 1 khz 0.06% total harmonic distortion thd+n v dd = 3.6 v, p o = 0.5 w, f = 1 khz 0.07% plus noise v dd = 2.5 v, p o = 200 mw, f = 1 khz 0.08% c (bypass) = 0.47 f, f = 217 hz to 2 khz, v dd = 3.6 v to 5.5 v, -87 v ripple = 200 mv pp inputs ac-grounded with c i = 2 m f c (bypass) = 0.47 m f, f = 217 hz to 2 khz, k svr supply ripple rejection ratio v dd = 2.5 v to 3.6 v, -82 db v ripple = 200 mv pp inputs ac-grounded with c i = 2 m f c (bypass) = 0.47 m f, f = 40 hz to 20 khz, v dd = 2.5 v to 5.5 v, -74 v ripple = 200 mv pp inputs ac-grounded with c i = 2 m f snr signal-to-noise ratio v dd = 5 v, p o = 1 w 104 db no weighting 17 v n output voltage noise f = 20 hz to 20 khz m v rms a weighting 13 v dd = 2.5 v to 5.5 v, f = 20 hz to 1 khz -85 common-mode rejection cmrr resistor tolerance = 0.1%, db ratio f = 20 hz to 20 khz -74 gain = 4v/v, v icm = 200 mv pp z i input impedance 2 m ? z o output impedance shutdown mode > 10k shutdown attenuation f = 20 hz to 20 khz, r f = r i = 20 k ? -80 db copyright ? 2002 ? 2008, texas instruments incorporated submit documentation feedback 3 product folder link(s): TPA6203A1
TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com microstar junior? (gqv or zqv) package (top view) 8-pin qfn (drb) package (top view) 8-pin msop (dgn) package (top view) terminal functions terminal i/o description drb, name gqv dgn bypass c1 2 i mid-supply voltage. adding a bypass capacitor improves psrr. gnd b2 7 i high-current ground in- c3 4 i negative differential input in+ c2 3 i positive differential input shutdown b1 1 i shutdown terminal (active low logic) v dd a3 6 i supply voltage terminal v o+ b3 5 o positive btl output v o- a1 8 o negative btl output connect to ground. thermal pad must be soldered down in all applications to properly secure device thermal pad on the pcb. 4 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1 (side view) shutdown in+ v dd v o+ gnd v o- in- ab c 1 2 3 bypass 8 shutdown bypass in+ in- v o- gndv dd v o+ 76 5 12 3 4 76 5 1 23 shutdown bypass in+ in- v o- gnd v dd v o+ 4 8
typical characteristics table of graphs TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 figure vs supply voltage 1 p o output power vs load resistance 2, 3 p d power dissipation vs output power 4, 5 maximum ambient temperature vs power dissipation 6 vs output power 7, 8 total harmonic distortion + noise vs frequency 9, 10, 11, 12 vs common-mode input voltage 13 supply voltage rejection ratio vs frequency 14, 15, 16, 17 supply voltage rejection ratio vs common-mode input voltage 18 gsm power supply rejection vs time 19 gsm power supply rejection vs frequency 20 vs frequency 21 cmrr common-mode rejection ratio vs common-mode input voltage 22 closed loop gain/phase vs frequency 23 open loop gain/phase vs frequency 24 vs supply voltage 25 i dd supply current vs shutdown voltage 26 start-up time vs bypass capacitor 27 copyright ? 2002 ? 2008, texas instruments incorporated submit documentation feedback 5 product folder link(s): TPA6203A1
typical characteristics TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com output power output power output power vs vs vs supply voltage load resistance load resistance figure 1. figure 2. figure 3. maximum ambient power dissipation power dissipation temperature vs vs vs output power output power power dissipation figure 4. figure 5. figure 6. total harmonic distortion + total harmonic distortion + total harmonic distortion + noise noise noise vs vs vs output power output power frequency figure 7. figure 8. figure 9. 6 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 m 100 m 1 2 p o - output power - w thd+n - t otal harmonic distortion + noise - % 2.5 v 5 v 3.6 v r l = 16 w f = 1 khzc (bypass) = 0 to 1 m f gain = 1 v/v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2.5 3 3.5 4 4.5 5 v dd - supply v oltage - v - output power - w p o r l = 8 w f = 1 khzgain = 1 v/v thd+n = 1% thd+n = 10% 0 0.2 0.4 0.6 0.8 1 1.2 1.4 8 13 18 23 28 v dd = 5 v v dd = 3.6 v v dd = 2.5 v r l - load resistance - w - output power - w p o f = 1 khzthd+n = 1% gain = 1 v/v 32 0 10 20 30 40 50 60 70 80 90 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 p d - power dissipation - w maximum ambient temperature - c o zqv package only 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 0.2 0.4 0.6 0.8 8 w 16 w p o - output power - w - power dissipation - w p d v dd = 3.6 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 8 w 16 w p o - output power - w - power dissipation - w p d v dd = 5 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v dd = 5 v c i = 2 m f r l = 8 w c (bypass) = 0 to 1 m f gain = 1 v/v 0.001 10 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 20 20 k 100 200 1 k 2 k 10 k f - frequency - hz thd+n - t otal harmonic distortion + noise - % 50 mw 250 mw 1 w 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 8 13 18 23 28 v dd = 5 v v dd = 3.6 v v dd = 2.5 v r l - load resistance - w - output power - w p o f = 1 khzthd+n = 10% gain = 1 v/v 32 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 m 3 100 m 1 2 p o - output power - w thd+n - t otal harmonic distortion + noise - % 2.5 v 3.6 v 5 v r l = 8 w, f = 1 khz c (bypass) = 0 to 1 m f gain = 1 v/v
TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 typical characteristics (continued) total harmonic distortion + total harmonic distortion + total harmonic distortion + noise noise noise vs vs vs frequency frequency frequency figure 10. figure 11. figure 12. total harmonic distortion + supply voltage rejection supply voltage rejection noise ratio ratio vs vs vs common mode input voltage frequency frequency figure 13. figure 14. figure 15. supply voltage rejection supply voltage rejection supply voltage rejection ratio ratio ratio vs vs vs frequency frequency common mode input voltage figure 16. figure 17. figure 18. copyright ? 2002 ? 2008, texas instruments incorporated submit documentation feedback 7 product folder link(s): TPA6203A1 0.001 10 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k f - frequency - hz thd+n - t otal harmonic distortion + noise - % 25 mw 125 mw 500 mw v dd = 3.6 v c i = 2 m f r l = 8 w c (bypass) = 0 to 1 m f gain = 1 v/v 0.001 10 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k f - frequency - hz thd+n - t otal harmonic distortion + noise - % 15 mw 200 mw 75 mw v dd = 2.5 v c i = 2 m f r l = 8 w c (bypass) = 0 to 1 m f gain = 1 v/v v dd = 3.6 v c i = 2 m f r l = 16 w c (bypass) = 0 to 1 m f gain = 1 v/v 0.001 10 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k f - frequency - hz thd+n - t otal harmonic distortion + noise - % 25 mw 250 mw 125 mw -100 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k v dd = 3.6 v v dd = 5 v v dd =2. 5 v f - frequency - hz - supply v oltage rejection ratio - db k svr c i = 2 m f r l = 8 w c (bypass) = 0.47 m f v p-p = 200 mv inputs ac-groundedgain = 1 v/v -100 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k f - frequency - hz - supply v oltage rejection ratio - db k svr v dd = 3.6 v v dd = 5 v v dd =2. 5 v gain = 5 v/vc i = 2 m f r l = 8 w c (bypass) = 0.47 m f v p-p = 200 mv inputs ac-grounded 0.01 0.10 1 10 0 0.5 1 1.5 2 2.5 3 3.5 v dd = 2.5 v v dd = 3.6 v f = 1 khzp o = 200 mw v ic - common mode input v oltage - v thd+n - t otal harmonic distortion + noise - % -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 2 3 4 5 v ic - common mode input v oltage - v f = 217 hzc (bypass) = 0.47 m f r l = 8 w gain = 1 v/v v dd = 2.5 v v dd = 3.6 v v dd = 5 v - supply v oltage rejection ratio - db k svr -100 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k f - frequency - hz - supply v oltage rejection ratio - db k svr v dd =2. 5 v v dd = 5 v v dd = 3.6 v c i = 2 m f r l = 8 w inputs floatinggain = 1 v/v v dd = 3.6 v c i = 2 m f r l = 8 w inputs ac-groundedgain = 1 v/v -100 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k f - frequency - hz - supply v oltage rejection ratio - db k svr c (bypass) = 0.1 m f c (bypass) = 0 c (bypass) = 0.47 m f c (bypass) = 1 m f
TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com typical characteristics (continued) gsm power supply gsm power supply rejection rejection common mode rejection ratio vs vs vs time frequency frequency figure 19. figure 20. figure 21. common mode rejection ratio closed loop gain/phase open loop gain/phase vs vs vs common mode input voltage frequency frequency figure 22. figure 23. figure 24. supply current supply current start-up time (1) vs vs vs supply voltage shutdown voltage bypass capacitor figure 25. figure 26. figure 27. 8 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1 c1frequency 217.41 hz c1 - duty 20 % c1 high 3.598 v c1 pk-pk504 mv v oltage - v ch1 100 mv/divch4 10 mv/div 2 ms/div t - time - ms v dd v o -100 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 20 20 k 50 100 200 500 1 k 2 k 5 k 10 k f - frequency - hz cmrr - common mode rejection ratio - db v dd = 2.5 v to 5 v v ic = 200 mv p-p r l = 8 w gain = 1 v/v -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 10 100 10 k 100 k 1 m 10 m -220 -180 -140 -100 -60 -20 20 60 100 140 180 220 1 k f - frequency - hz gain - db phase - degrees gain phase v dd = 3.6 v r l = 8 w gain = 1 v/v -200 -150 -100 -50 0 50 100 150 200 100 1 k 10 k 100 k 1 m -200 -150 -100 -50 0 50 100 150 200 f - frequency - hz gain - db phase - degrees gain phase v dd = 3.6 v r l = 8 w 10 m -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 r l = 8 w gain = 1 v/v v ic - common mode input v oltage - v cmrr - common mode rejection ratio - db v dd = 3.6 v v dd = 5 v v dd = 2.5 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 v dd - supply v oltage - v - supply current - ma i dd 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 v dd = 2.5 v v dd = 3.6 v v dd = 5 v v oltage on shutdown t erminal - v - supply current - ma i dd 0.2 0 1 2 3 4 5 6 0 0.5 1 1.5 2 c (bypass) - bypass capacitor - m f start-up time - ms (1) start-up time is the time it takes (from a low-to-high transition on shutdown ) for the gain of the amplifier to reach -3 db of the final gain. f - frequency - hz 0 -50 -100 0 200 400 600 800 1k 1.2k - output v oltage - dbv 1.4k 1.6k 1.8k 2k -150 -150 -100 0-50 v o - supply v oltage - dbv v dd v dd shown in figure 19 c i = 2 m f, c (bypass) = 0.47 m f, inputs ac-groundedgain = 1v/v
application information fully differential amplifier application schematics advantages of fully differential amplifiers TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 negative channels equally and cancels at the differential output. however, removing the bypass capacitor slightly worsens power supply rejection the TPA6203A1 is a fully differential amplifier with ratio (k svr ), but a slight decrease of k svr may be differential inputs and outputs. the fully differential acceptable when an additional component can be amplifier consists of a differential amplifier and a eliminated (see figure 17 ). common- mode amplifier. the differential amplifier better rf-immunity: gsm handsets save power ensures that the amplifier outputs a differential by turning on and shutting off the rf transmitter at voltage that is equal to the differential input times the a rate of 217 hz. the transmitted signal is gain. the common-mode feedback ensures that the picked-up on input and output traces. the fully common-mode voltage at the output is biased around differential amplifier cancels the signal much v dd /2 regardless of the common- mode voltage at the better than the typical audio amplifier. input. input coupling capacitors not required: a fully figure 28 through figure 30 show application differential amplifier with good cmrr, like the schematics for differential and single-ended inputs. TPA6203A1, allows the inputs to be biased at typical values are shown in table 1 . voltage other than mid-supply. for example, if a dac has mid-supply lower than the mid-supply of table 1. typical component values the TPA6203A1, the common-mode feedback component value circuit adjusts for that, and the TPA6203A1 r i 10 k ? outputs are still biased at mid-supply of the r f 10 k ? TPA6203A1. the inputs of the TPA6203A1 can be biased from 0.5 v to v dd - 0.8 v. if the inputs c (bypass) (1) 0.22 m f are biased outside of that range, input coupling c s 1 m f capacitors are required. c i 0.22 m f mid-supply bypass capacitor, c (bypass) , not (1) c (bypass) is optional required: the fully differential amplifier does not require a bypass capacitor. this is because any shift in the mid-supply affects both positive and figure 28. typical differential input application schematic copyright ? 2002 ? 2008, texas instruments incorporated submit documentation feedback 9 product folder link(s): TPA6203A1 _+ v dd v o+ v o- gnd to battery c s bias circuitry in-in+ + - in from dac shutdown r i r i c ( ) bypass (optional) r f r f
bypass capacitor (c bypass ) and start-up time selecting components resistors (r f and r i ) (1) TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com figure 29. differential input application schematic optimized with input capacitors figure 30. single-ended input application schematic the internal voltage divider at the bypass pin of this device sets a mid-supply voltage for internal references and sets the output common mode the input (r i ) and feedback resistors (r f ) set the voltage to v dd /2. adding a capacitor to this pin filters gain of the amplifier according to equation 1 . any noise into this pin and increases the k svr . c (bypass) also determines the rise time of v o+ and v o- when the device is taken out of shutdown. the larger r f and r i should range from 1 k ? to 100 k ? . most the capacitor, the slower the rise time. although the graphs were taken with r f = r i = 20 k ? . output rise time depends on the bypass capacitor resistor matching is very important in fully differential value, the device passes audio 4 m s after taken out of amplifiers. the balance of the output on the reference shutdown and the gain is slowly ramped up based on voltage depends on matched ratios of the resistors. c (bypass) . cmrr, psrr, and the cancellation of the second to minimize pops and clicks, design the circuit so the harmonic distortion diminishes if resistor mismatch impedance (resistance and capacitance) detected by occurs. therefore, it is recommended to use 1% both inputs, in+ and in-, is equal. tolerance resistors or better to keep the performance optimized. 10 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1 gain = r f /r i _+ v dd v o+ v o- gnd to battery c s bias circuitry in-in+ + - in shutdown r i r i r f r f c i c i c ( ) bypass (optional) _+ v dd v o+ v o- gnd to battery c s bias circuitry in-in+ in shutdown r i r f c i c i r i r f c ( ) bypass (optional)
input capacitor (c i ) decoupling capacitor (c s ) (2) using low-esr capacitors differential output versus (3) TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 the TPA6203A1 does not require input coupling the TPA6203A1 is a high-performance cmos audio capacitors if using a differential input source that is amplifier that requires adequate power supply biased from 0.5 v to v dd - 0.8 v. use 1% tolerance decoupling to ensure the output total harmonic or better gain-setting resistors if not using input distortion (thd) is as low as possible. power supply coupling capacitors. decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. for in the single-ended input application an input higher frequency transients, spikes, or digital hash on capacitor, c i , is required to allow the amplifier to bias the line, a good low equivalent-series- resistance the input signal to the proper dc level. in this case, c i (esr) ceramic capacitor, typically 0.1 m f to 1 m f, and r i form a high-pass filter with the corner placed as close as possible to the device v dd lead frequency determined in equation 2 . works best. for filtering lower frequency noise signals, a 10- m f or greater capacitor placed near the audio power amplifier also helps, but is not required in most applications because of the high psrr of this device. low-esr capacitors are recommended throughout this applications section. a real (as opposed to ideal) capacitor can be modeled simply as a resistor in series with an ideal capacitor. the voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. the lower the equivalent value of this resistance the more the real capacitor behaves like an ideal capacitor. the value of c i is important to consider as it directly affects the bass (low frequency) performance of the single-ended output circuit. consider the example where r i is 10 k ? and figure 31 shows a class-ab audio power amplifier the specification calls for a flat bass response down (apa) in a fully differential configuration. the to 100 hz. equation 2 is reconfigured as equation 3 . TPA6203A1 amplifier has differential outputs driving both ends of the load. there are several potential benefits to this differential drive configuration, but initially consider power to the load. the differential in this example, c i is 0.16 m f, so one would likely drive to the speaker means that as one side is choose a value in the range of 0.22 m f to 0.47 m f. a slewing up, the other side is slewing down, and vice further consideration for this capacitor is the leakage versa. this in effect doubles the voltage swing on the path from the input source through the input network load as compared to a ground referenced load. (r i , c i ) and the feedback resistor (r f ) to the load. plugging 2 v o(pp) into the power equation, where this leakage current creates a dc offset voltage at the voltage is squared, yields 4 the output power from input to the amplifier that reduces useful headroom, the same supply rail and load impedance (see especially in high gain applications. for this reason, a equation 4 ). ceramic capacitor is the best choice. when polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at v dd /2, which is likely higher than the source dc level. it is important to confirm the capacitor polarity in the application. copyright ? 2002 ? 2008, texas instruments incorporated submit documentation feedback 11 product folder link(s): TPA6203A1 f c 1 2 r i c i 3 db f c c i 1 2 r i f c
(4) (5) TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com low-frequency performance of the system. this frequency-limiting effect is due to the high pass filter network created with the speaker impedance and the coupling capacitance and is calculated with equation 5 . for example, a 68- m f capacitor with an 8- ? speaker would attenuate low frequencies below 293 hz. the btl configuration cancels the dc offsets, which eliminates the need for the blocking capacitors. low-frequency performance is then limited only by the input network and speaker response. cost and pcb space are also minimized by eliminating the bulky coupling capacitor. figure 31. differential output configuration in a typical wireless handset operating at 3.6 v, bridging raises the power into an 8- ? speaker from a singled-ended (se, ground reference) limit of 200 mw to 800 mw. in sound power that is a 6-db improvement ? which is loudness that can be heard. in addition to increased power there are frequency response concerns. consider the single-supply se configuration shown in figure 32 . a coupling capacitor is required to block the dc offset voltage figure 32. single-ended output and frequency from reaching the load. this capacitor can be quite response large (approximately 33 m f to 1000 m f) so it tends to be expensive, heavy, occupy valuable pcb area, and increasing power to the load does carry a penalty of have the additional drawback of limiting increased internal power dissipation. the increased dissipation is understandable considering that the btl configuration produces 4 the output power of the se configuration. 12 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1 v (rms) v o(pp) 2 2 power v (rms) 2 r l f c 1 2 r l c c r l 2x v o(pp) v o(pp) v o(pp) v dd v dd r l c c v o(pp) v o(pp) v dd 3 db f c
fully differential amplifier (6) TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 efficiency and thermal information class-ab amplifiers are inefficient. the primary cause of these inefficiencies is voltage drop across the output stage transistors. there are two components of the internal voltage drop. one is the headroom or dc voltage drop that varies inversely to output power. the second component is due to the sinewave nature of the output. the total voltage drop can be calculated by subtracting the rms value of the output voltage from v dd . the internal voltage drop multiplied by the average value of the supply current, i dd (avg), determines the internal power dissipation of the amplifier. figure 33. voltage and current waveforms for btl amplifiers an easy-to-use equation to calculate efficiency starts out as being equal to the ratio of power from the power supply to the power delivered to the load. to although the voltages and currents for se and btl accurately calculate the rms and average values of are sinusoidal in the load, currents from the supply power in the load and in the amplifier, the current and are very different between se and btl voltage waveform shapes must first be understood configurations. in an se application the current (see figure 33 ). waveform is a half-wave rectified shape, whereas in btl it is a full-wave rectified waveform. this means rms conversion factors are different. keep in mind that for most of the waveform both the push and pull transistors are not on at the same time, which supports the fact that each amplifier in the btl device only draws current from the supply for half the waveform. the following equations are the basis for calculating amplifier efficiency. copyright ? 2002 ? 2008, texas instruments incorporated submit documentation feedback 13 product folder link(s): TPA6203A1 v (lrms) v o i dd i dd(avg) efficiency of a btl amplifier p l p sup where: p l v l rms 2 r l , and v lrms v p 2 , therefore, p l v p 2 2r l p l = power delivered to load p sup = power drawn from power supply v lrms = rms voltage on btl load r l = load resistance v p = peak voltage on btl load i dd avg = average current drawn from the power supplyv dd = power supply voltage h btl = efficiency of a btl amplifier and p sup v dd i dd avg and i dd avg 1 0 v p r l sin(t) dt 1 v p r l [ cos(t) ] 0 2v p r l therefore, p sup 2 v dd v p r l substituting p l and p sup into equation 6, efficiency of a btl amplifier v p 2 2 r l 2 v dd v p r l v p 4 v dd v p 2 p l r l where:
(9) (7) (10) pcb layout (8) TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com given q ja , the maximum allowable junction temperature, and the maximum internal dissipation, the maximum ambient temperature can be calculated with the following equation. the maximum table 2. efficiency and maximum ambient recommended junction temperature for the temperature vs output power in 5-v 8- ? btl systems TPA6203A1 is 125 c. power max output internal efficiency from ambient power dissipation (%) supply temperature (w) (w) (w) ( c) equation 10 shows that the maximum ambient 0.25 31.4 0.55 0.75 62 temperature is 53.3 c at maximum power dissipation 0.50 44.4 0.62 1.12 54 with a 5-v supply. 1.00 62.8 0.59 1.59 58 table 2 shows that for most applications no airflow is 1.25 70.2 0.53 1.78 65 required to keep junction temperatures in the specified range. the TPA6203A1 is designed with table 2 employs equation 7 to calculate efficiencies thermal protection that turns the device off when the for four different output power levels. note that the junction temperature surpasses 150 c to prevent efficiency of the amplifier is quite low for lower power damage to the ic. also, using more resistive than 8- ? levels and rises sharply as power to the load is speakers dramatically increases the thermal increased resulting in a nearly flat internal power performance by reducing the output current. dissipation over the normal operating range. note that the internal dissipation at full output power is less than in the half power range. calculating the efficiency for a specific system is the key to proper in making the pad size for the bga balls, it is power supply design. for a 1.25-w audio system with recommended that the layout use solder- 8- ? loads and a 5-v supply, the maximum draw on mask-defined (smd) land. with this method, the the power supply is almost 1.8 w. copper pad is made larger than the desired land area, and the opening size is defined by the opening in the a final point to remember about class-ab amplifiers solder mask material. the advantages normally is how to manipulate the terms in the efficiency associated with this technique include more closely equation to the utmost advantage when possible. controlled size and better copper adhesion to the note that in equation 7 , v dd is in the denominator. laminate. increased copper also increases the this indicates that as v dd goes down, efficiency goes thermal performance of the ic. better size control is up. the result of photo imaging the stencils for masks. a simple formula for calculating the maximum power small plated vias should be placed near the center dissipated, p dmax , may be used for a differential ball connecting ball b2 to the ground plane. added output application: plated vias and ground plane act as a heatsink and increase the thermal performance of the device. figure 34 shows the appropriate diameters for a 2 mm x 2 mm microstar junior? bga layout. it is very important to keep the TPA6203A1 external p dmax for a 5-v, 8- ? system is 634 mw. components very close to the TPA6203A1 to limit the maximum ambient temperature depends on the noise pickup. the TPA6203A1 evaluation module heat sinking ability of the pcb system. the derating (evm) layout is shown in the next section as a layout factor for the 2 mm x 2 mm microstar junior? example. package is shown in the dissipation rating table. converting this to q ja : 14 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1 btl 2 p l r l 4 v dd therefore, t a max t j max q ja p dmax 125 113 ( 0.634 ) 53.3 c p d max 2 v 2 d d 2 r l q ja 1 derating factor 1 0.0088 113 c w
TPA6203A1 www.ti.com .......................................................................................................................................................... slos364f ? march 2002 ? revised june 2008 figure 34. microstar junior? bga recommended layout copyright ? 2002 ? 2008, texas instruments incorporated submit documentation feedback 15 product folder link(s): TPA6203A1 c1c2 c3 b1b3 a1a3 0.25 mm 0.28 mm 0.38 mm solder maskpaste mask (stencil) copper t race b2 vias to ground plane
8-pin qfn (drb) layout TPA6203A1 slos364f ? march 2002 ? revised june 2008 .......................................................................................................................................................... www.ti.com use the following land pattern for board layout with the 8-pin qfn (drb) package. note that the solder paste should use a hatch pattern to fill solder paste at 50% to ensure that there is not too much solder paste under the package. figure 35. TPA6203A1 8-pin qfn (drb) board layout (top view) 16 submit documentation feedback copyright ? 2002 ? 2008, texas instruments incorporated product folder link(s): TPA6203A1 0.65 mm 0.38 mm solder mask: 1.4 mm x 1.85 mm centered in package 0.7 mm 1.4 mm make solder paste a hatch pattern to fill 50% 3.3 mm 1.95 mm 0.33 mm plugged vias (5 places)
package option addendum www.ti.com 15-apr-2017 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples hpa00194dgnr active msop- powerpad dgn 8 2500 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 aaii TPA6203A1dgn active msop- powerpad dgn 8 80 green (rohs & no sb/br) cu nipdau | cu nipdauag level-1-260c-unlim -40 to 85 aaii TPA6203A1dgng4 active msop- powerpad dgn 8 80 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 aaii TPA6203A1dgnr active msop- powerpad dgn 8 2500 green (rohs & no sb/br) cu nipdau | cu nipdauag level-1-260c-unlim -40 to 85 aaii TPA6203A1dgnrg4 active msop- powerpad dgn 8 2500 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 aaii TPA6203A1drb active son drb 8 121 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 aaji TPA6203A1drbg4 active son drb 8 121 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 aaji TPA6203A1drbr active son drb 8 3000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 aaji TPA6203A1drbrg4 active son drb 8 3000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 aaji TPA6203A1gqvr active bga microstar junior gqv 8 2500 tbd snpb level-2a-235c-4 wks -40 to 85 aadi TPA6203A1zqvr active bga microstar junior zqv 8 2500 green (rohs & no sb/br) snagcu level-2-260c-1 year -40 to 85 aaei (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined.
package option addendum www.ti.com 15-apr-2017 addendum-page 2 pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant TPA6203A1dgnr msop- power pad dgn 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 q1 TPA6203A1dgnr msop- power pad dgn 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 q1 TPA6203A1drbr son drb 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 q2 TPA6203A1drbr son drb 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 q2 TPA6203A1gqvr bga mi crosta r juni or gqv 8 2500 330.0 8.4 2.3 2.3 1.4 4.0 8.0 q1 TPA6203A1zqvr bga mi crosta r juni or zqv 8 2500 330.0 8.4 2.3 2.3 1.4 4.0 8.0 q1 TPA6203A1zqvr bga mi crosta r juni or zqv 8 2500 330.0 8.4 2.3 2.3 1.4 4.0 8.0 q1 package materials information www.ti.com 2-nov-2016 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) TPA6203A1dgnr msop-powerpad dgn 8 2500 358.0 335.0 35.0 TPA6203A1dgnr msop-powerpad dgn 8 2500 364.0 364.0 27.0 TPA6203A1drbr son drb 8 3000 367.0 367.0 35.0 TPA6203A1drbr son drb 8 3000 367.0 367.0 35.0 TPA6203A1gqvr bga microstar junior gqv 8 2500 336.6 336.6 28.6 TPA6203A1zqvr bga microstar junior zqv 8 2500 336.6 336.6 28.6 TPA6203A1zqvr bga microstar junior zqv 8 2500 338.1 338.1 20.6 package materials information www.ti.com 2-nov-2016 pack materials-page 2

mechanical data mpbg144c ? june 2000 ? revised february 2002 post office box 655303 ? dallas, texas 75265 gqv (s-pbga-n8) plastic ball grid array 0,50 0,08 0,50 m ? 0,05 4201040/e 01/02 2,10 1,90 1,00 max 0,25 0,35 1 seating plane 1,00 typ a 1,00 typ 0,25 0,15 23 b c 0,77 0,71 sq a1 corner bottom view notes: a. all linear dimensions are in millimeters. b. this drawing is subject to change without notice. c. microstar junior ? configuration d. falls within jedec mo-225 microstar junior is a trademark of texas instruments.

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